Photo Reflective Sensor


This is a reflective sensor combines a GaA1As infrared light emitting diode with a high sensitive Darlington phototransistor in a mini package.


  • Compact

  • High performance

  • High output

  • Easy to mount on PCB

  • Widely applicable

Application Ideas

  • Timing sensors

  • Edge sensors

  • Micro floppy disc drivers

  • Level sensors of liquid


Maximum Ratings (Ta=25℃)

Item Symbol Rating Unit
Input Power Dissipation PD 100 mW
Reverse Voltage VR 5 V
Forward Current IF 50 mA
Pulse Forward current * 1 IFP 1 A
Output Collector Power Dissipation Pc 100 mW
Collector Current Ic 20 mA
C-E Voltage VCEO 30 V
E-C Voltage VECO 5 V
Operating Temperature Topr -10~+65
Storage Temperature Tstg -25~+85
Soldering Temperature *2 Tsol 260

Electro-optical Characteristics (Ta=25℃)

Item Symbol Conditions Min Typ Max Unit
Input Forward Voltage VF IF=20mA 1.2 1.6 V
Reverse Current IR VR=5V 10 µA
Capacitance Ct V=0V, f=1kHZ 25 pF
Peak Wavelength λP 940 nm
Output Collector Dark Current ICEO VCE=20V 0.1 µA
Light Current IL VCE=5V,IF=20mA 50 µA
Leakage Current ICEOD VCE=5V,IF=10mA 1 µA
Switching Speeds Rise Time tr Vcc=5V, Ic=1mA, RL=1kΩ 15 µsec
Fall Time tf 15 µsec

Mechanic Dimensions

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