Photo Reflective Sensor

Introduction

http://www.seeedstudio.com/depot/images/product/rs081.jpg

This is a reflective sensor combines a GaA1As infrared light emitting diode with a high sensitive Darlington phototransistor in a mini package.

Features


  • Compact

  • High performance

  • High output

  • Easy to mount on PCB

  • Widely applicable

Application Ideas


  • Timing sensors

  • Edge sensors

  • Micro floppy disc drivers

  • Level sensors of liquid

Specification


Maximum Ratings (Ta=25℃)

Item Symbol Rating Unit
Input Power Dissipation PD 100 mW
Reverse Voltage VR 5 V
Forward Current IF 50 mA
Pulse Forward current * 1 IFP 1 A
Output Collector Power Dissipation Pc 100 mW
Collector Current Ic 20 mA
C-E Voltage VCEO 30 V
E-C Voltage VECO 5 V
Operating Temperature Topr -10~+65
Storage Temperature Tstg -25~+85
Soldering Temperature *2 Tsol 260

Electro-optical Characteristics (Ta=25℃)

Item Symbol Conditions Min Typ Max Unit
Input Forward Voltage VF IF=20mA 1.2 1.6 V
Reverse Current IR VR=5V 10 µA
Capacitance Ct V=0V, f=1kHZ 25 pF
Peak Wavelength λP 940 nm
Output Collector Dark Current ICEO VCE=20V 0.1 µA
Light Current IL VCE=5V,IF=20mA 50 µA
Leakage Current ICEOD VCE=5V,IF=10mA 1 µA
Switching Speeds Rise Time tr Vcc=5V, Ic=1mA, RL=1kΩ 15 µsec
Fall Time tf 15 µsec

Mechanic Dimensions

Help us make it better

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An easy-to-use instruction is as important as the product itself. We are expecting this new system will improve your experience when using Seeed’s products. However since this is the first edition, there are still many things need to improve, if you have any suggestions or findings, you are most welcome to submit the amended version as our contributor or give us suggestions in the survey below, Please don’t forget to leave your email address so that we can reply.

Happy hacking